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2006-08-25 page 1 rev. 2.0 bso 615 c g sipmos small-signal-transistor product summary n p drain source voltage v ds 60 -60 v drain-source on-state resistance r ds(on) 0.11 0.3 w continuous drain current i d 3.1 -2 a features dual n- and p -channel enhancement mode logic level avalanche rated pb-free lead plating; rohs compliant type package marking bso 615 c pg-dso-8 615c maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit n p continuous drain current t a = 25 c t a = 70 c i d 3.1 2.5 -2 -1.6 a pulsed drain current t a = 25 c i d puls 12.4 -8 avalanche energy, single pulse i d = 3.1 a , v dd = 25 v, r gs = 25 w i d = -2 a , v dd = -25 v, r gs = 25 w e as 47 - - 70 mj avalanche energy, periodic limited by t jmax e ar 0.2 0.2 reverse diode d v /d t, t jmax = 150 c i s = 3.1 a, v ds = 48 v, d i /d t = 200 a/s i s = -2 a, v ds = -48 v, d i /d t = -200 a/s d v /d t 6 - - 6 kv/s gate source voltage v gs 20 20 v power dissipation t a = 25 c p tot 2 2 w operating and storage temperature t j , t stg -55...+150 c iec climatic category; din iec 68-1 55/150/56
2006-08-25 page 2 rev. 2.0 bso 615 c g termal characteristics parameter symbol values uni t min. typ. max. dynamic characteristics thermal resistance, junction - soldering point ( pin 4) n p r thjs - - - - 40 40 k/ w smd version, device on pcb: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. n n p p r thja - - - - - - - - 100 62.5 110 62.5 static characteristics , at t j = 25 c, unless otherwise specified drain- source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = -250 a n p v (br)ds s 60 -60 - - - - v gate threshold voltage, v gs = v ds i d = 20 a i d = -450 a n p v gs(th) 1.2 -1 1.6 -1.5 2.0 -2.0 zero gate voltage drain current v ds = 60 v, v gs = 0 v, t j = 25 c v ds = 60 v, v gs = 0 v, t j = 125 c v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 125 c n n p p i dss - - - - 0.1 10 -0.1 -10 1 100 -1 -100 a gate-source leakage current v gs = 20 v, v ds = 0 v v gs = -20 v, v ds = 0 v n p i gss - - 10 -10 100 -100 na drain-source on-state resistance v gs = 4.5 v, i d = 2.7 a v gs = -4.5 v, i d = -1.7 a n p r ds(on) - - 0.1 0.27 0.15 0.45 w drain-source on-state resistance v gs = 10 v, i d = 3.1 a v gs = -10 v , i d = -2 a n p r ds(on) - - 0.07 0.19 0.11 0.3 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2006-08-25 page 3 rev. 2.0 bso 615 c g electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values uni t min. typ. max. characteristics transconductance v ds 3 2 * i d * r ds(on)max , i d = 2.7 a vv ds 3 2 * i d * r ds(on)max , i d = -1.7 a n p g fs 2.25 1.2 5.5 2.4 - - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c iss - - 300 365 380 460 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c oss - - 90 105 120 135 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c rss - - 50 40 65 50 turn-on delay time v dd = 30 v, v gs = 4.5 v, i d = 2.7 a, r g = 16 w v dd = -30 v, v gs = -4.5 v, i d = -1.7 a, r g = 13 w n p t d(on) - - 16 24 24 36 ns rise time v dd = 30 v, v gs = 4.5 v, i d = 2.7 a, r g = 16 w v dd = -30 v, v gs = -4.5 v, i d = -1.7 a, r g = 13 w n p t r - - 75 105 115 160 turn-off delay time v dd = 30 v, v gs = 4.5 v, i d = 2.7 a, r g = 16 w v dd = -30 v, v gs = -4.5 v, i d = -1.7 a, r g = 13 w n p t d(off) - - 25 125 40 190 fall time v dd = 30 v, v gs = 4.5 v, i d = 2.7 a, r g = 16 w v dd = -30 v, v gs = -4.5 v, i d = -1.7 , r g = 13 w n p t f - - 18 90 27 135
2006-08-25 page 4 rev. 2.0 bso 615 c g electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. characteristics gate to source charge v dd = 48 v, i d = 3.1 a v dd = -48 v, i d = -2 a n p q gs - - 0.5 1.7 0.75 2.6 nc gate to drain charge v dd = 48 v, i d = 3.1 a v dd = -48 v, i d = -2 a n p q gd - - 6.3 4.3 9.5 6.5 gate charge total v dd = 48 v, i d = 3.1 a, v gs = 0 to 10v v dd = -48 v, i d = -2 a, v gs = 0 to -10v n p q g - - 15 13.5 22.5 20 gate plateau voltage v dd = 48 v, i d = 3.1 a v dd = -48 v, i d = -2 a n p v (plateau) - - 3.1 -2.8 - - v reverse diode inverse diode continuous forward current t a = 25 c n p i s - - - - 3.1 -2 a inverse diode direct current,pulsed t a = 25 c n p i sm - - - - 12.4 -8 inverse diode forward voltage v gs = 0 v, i f = i s v gs = 0 v, i f = i s n p v sd - - 0.8 -0.8 1.1 -1.1 v reverse recovery time v r = 30 v, i f = l s , d i f /d t = 100 a/s v r = -30 v, i f = l s , d i f /d t = -100 a/s n p t rr - - 50 85 75 130 ns reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s v r = -30 v, i f = l s , d i f /d t = -100 a/s n p q rr - - 70 120 105 180 nc
2006-08-25 page 5 rev. 2.0 bso 615 c g power dissipation (p-ch.) p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 w 2.2 bso 615 c p tot power dissipation (n-ch.) p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 w 2.2 bso 615 c p tot drain current (n-ch.) i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 a 3.4 bso 615 c i d drain current (p-ch.) i d = f ( t a ) parameter: v gs 3 -10 v 0 20 40 60 80 100 120 c 160 t a 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 a -2.2 bso 615 c i d
2006-08-25 page 6 rev. 2.0 bso 615 c g safe operating area (n-ch.) i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a bso 615 c i d r d s ( on) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 4.7 s safe operating area (p-ch.) i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 a bso 615 c i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 90.0 s transient thermal impedance (n-ch.) z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -1 10 0 10 1 10 2 10 k/w bso 615 c z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 transient thermal impedance (p-ch.) z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bso 615 c z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-08-25 page 7 rev. 2.0 bso 615 c g typ. output characteristics (n-ch.) i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 a 7.5 bso 615 c i d v gs [v] a a 2.5 b b 2.7 c c 3.0 d d 3.2 e e 3.5 f f 3.7 g p tot = 2.00 w g 4.0 typ. output characteristics (p-ch.) i d = f ( v ds ) parameter: t p = 80 s 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v ds 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 a -5.0 bso 615 c i d v gs [v] a a -2.5 b b -2.7 c c -3.0 d d -3.2 e e -3.5 f f -3.7 g p tot = 2.00 w g -4.0 typ. drain-source-on-resistance (n-ch.) r ds(on) = f ( i d ) parameter: v gs 0.0 1.0 2.0 3.0 4.0 5.0 a 6.5 i d 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 w 0.36 bso 615 c r ds(on) c v gs [v] = c 3.0 d d 3.2 e e 3.5 f f 3.7 g g 4.0 typ. drain-source-on-resistance (p-ch.) r ds(on) = f ( i d ) parameter: v gs 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 c -3.4 t j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 w 1.0 bso 615 c r ds(on) a v gs [v] = a -2.5 b b -2.7 c c -3.0 d d -3.2 e e -3.5 f f -3.7 g g -4.0
2006-08-25 page 8 rev. 2.0 bso 615 c g typ. transfer characteristics (n-ch.) parameter: t p = 80 s i d = f ( v gs ), v ds 3 2 x i d x r ds(on)max 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs 5.0 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 a 7.0 i d typ. transfer characteristics (p-ch.) parameter: t p = 80 s i d = f ( v gs ), v ds 3 2 x i d x r ds(on)max 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v gs -5.0 v 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 a -5.0 i d typ. forward transconductance (n-ch.) g fs = f( i d ); t j = 25 c parameter: g fs 0 1 2 3 4 5 6 7 8 a 10 i d 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 s 10.0 g fs typ. forward transconductance (p-ch.) g fs = f( i d ); t j = 25 c parameter: g fs 0.0 -1.0 -2.0 -3.0 -4.0 a -6.0 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 s 4.0 g fs
2006-08-25 page 9 rev. 2.0 bso 615 c g drain-source on-resistance (n-ch.) r ds(on) = f ( t j ) parameter : i d = 3.1 a , v gs = 10 v -60 -20 20 60 100 c 180 t j 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 w 0.30 bso 615 c r ds(on) typ 98% drain-source on-resistance (p-ch.) r ds(on) = f ( t j ) parameter : i d = -2 a , v gs = -10 v -60 -20 20 60 100 c 180 t j 0.00 0.10 0.20 0.30 0.40 0.50 0.60 w 0.80 bso 615 c r ds(on) typ 98% gate threshold voltage (n-ch.) v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 20 a -60 -20 20 60 100 c 160 t j 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 v 3.0 v gs(th) 2% -60 -20 20 60 100 c 160 t j 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 v 3.0 v gs(th) typ -60 -20 20 60 100 c 160 t j 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 v 3.0 v gs(th) 98% -60 -20 20 60 100 c 160 t j 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 v 3.0 v gs(th) gate threshold voltage (p-ch.) v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -450 a -60 -20 20 60 100 c 160 t j 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 v -3.0 v gs(th) 2% -60 -20 20 60 100 c 160 t j 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 v -3.0 v gs(th) typ -60 -20 20 60 100 c 160 t j 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 v -3.0 v gs(th) 98% -60 -20 20 60 100 c 160 t j 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 v -3.0 v gs(th)
2006-08-25 page 10 rev. 2.0 bso 615 c g typ. capacitances (n-ch.) c = f( v ds ) parameter: v gs =0 v, f =1 mhz 0 5 10 15 20 25 v ds 35 v 1 10 2 10 3 10 pf c c iss c oss c rss typ. capacitances (p-ch.) c = f( v ds ) parameter: v gs =0 v, f =1 mhz 0 -5 -10 -15 -20 -25 v ds -35 v 1 10 2 10 3 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ), (n-ch.) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -2 10 -1 10 0 10 1 10 a bso 615 c i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) forward characteristics of reverse diode i f = f ( v sd ), (p-ch.) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -2 10 -1 10 0 10 1 10 a bso 615 c i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-08-25 page 11 rev. 2.0 bso 615 c g avalanche energy e as = f ( t j ) (n-ch.) parameter: i d = 3.1 a , v dd = 25 v r gs = 25 w 25 45 65 85 105 125 c 165 t j 0 5 10 15 20 25 30 35 40 mj 50 e as avalanche energy e as = f ( t j ) parameter: i d = -2 a , v dd = -25 v r gs = 25 w 25 45 65 85 105 125 c 165 t j 0 10 20 30 40 50 60 mj 80 e as typ. gate charge (n-ch.) v gs = f ( q gate ) parameter: i d = 3.1 a 0 2 4 6 8 10 12 14 16 nc 20 q gate 0 2 4 6 8 10 12 v 16 bso 615 c v gs ds max v 0,8 ds max v 0,2 typ. gate charge (p-ch.) v gs = f ( q gate ) parameter: i d = -2 a 0 2 4 6 8 10 12 14 16 nc 20 q gate 0 -2 -4 -6 -8 -10 -12 v -16 bso 615 c v gs ds max v 0,8 ds max v 0,2
2006-08-25 page 12 rev. 2.0 bso 615 c g drain-source breakdown voltage v (br)dss = f ( t j ), (n-ch.) -60 -20 20 60 100 c 180 t j 54 56 58 60 62 64 66 68 v 72 bso 615 c v (br)dss drain-source breakdown voltage v (br)dss = f ( t j ), (p-ch.) -60 -20 20 60 100 c 180 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 bso 615 c v (br)dss
2006-08-25 page 13 rev. 2.0 bso 615 c g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. all rights reserved. attention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.co m ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain sustain and/or protect human life. if they fail, it is reasonab le to assume that the health of the user or other persons may be endangered.

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